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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY30N60D/D Designer'sTM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co-packaged IGBT's save space, reduce assembly time and cost. * * * * * * Industry Standard High Power TO-264 Package (TO-3PBL) High Speed Eoff: 60 mJ per Amp typical at 125C High Short Circuit Capability - 10 ms minimum Soft Recovery Free Wheeling Diode is included in the package Robust High Voltage Termination Robust RBSOA C MGY30N60D Motorola Preferred Device IGBT & DIODE IN TO-264 30 A @ 90C 50 A @ 25C 600 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340G-02, Style 5 TO-264 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJC RJA TL Value 600 600 20 50 30 100 202 1.61 - 55 to 150 10 0.62 1.41 35 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/C C ms C/W C Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola TMOS Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MGY30N60D ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 15 Adc) (VGE = 15 Vdc, IC = 15 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 30 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Gate Charge (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 15 Adc) (IEC = 15 Adc, TJ = 125C) (IEC = 30 Adc) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. VFEC -- -- -- 1.30 1.10 1.45 1.80 -- 2.05 (continued) Vdc (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 125C) Energy losses include "tail" (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 76 80 348 188 0.98 2.00 2.98 73 95 394 418 1.90 3.10 5.00 150 30 45 -- -- -- -- 1.28 -- -- -- -- -- -- -- -- -- -- -- -- nC mJ ns mJ ns (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Cies Coes Cres -- -- -- 4280 225 19 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 15 8.0 -- -- 2.20 2.10 2.60 2.90 -- 3.45 Vdc mV/C Mhos Vdc BVCES 600 -- ICES -- -- IGES -- -- -- -- 100 2500 250 nAdc -- 870 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit 2 Motorola TMOS Power MOSFET Transistor Device Data MGY30N60D ELECTRICAL CHARACTERISTICS -- continued (TJ = 25C unless otherwise noted) Characteristic DIODE CHARACTERISTICS -- continued Reverse Recovery Time (IF = 30 Adc, VR = 360 Vdc, dIF/dt = 200 A/s) Reverse Recovery Stored Charge Reverse Recovery Time (IF = 30 Adc, VR = 360 Vdc, dIF/dt = 200 A/s, TJ = 125C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) LE -- 13 -- nH trr ta tb QRR trr ta tb QRR -- -- -- -- -- -- -- -- 153 82 71 2.3 208 117 91 3.8 -- -- -- -- -- -- -- -- C C ns ns Symbol Min Typ Max Unit TYPICAL ELECTRICAL CHARACTERISTICS 60 TJ = 25C IC, COLLECTOR CURRENT (AMPS) VGE = 20 V 17.5 V 40 15 V 12.5 V IC, COLLECTOR CURRENT (AMPS) 10 V 60 TJ = 125C VGE = 20 V 17.5 V 40 15 V 12.5 V 10 V 20 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25C 60 IC, COLLECTOR CURRENT (AMPS) VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 3 Figure 2. Output Characteristics, TJ = 125C VCE = 100 V 5 s PULSE WIDTH TJ = 125C VGE = 15 V 80 s PULSE WIDTH IC = 30 A 40 2.6 22.5 A 25C 20 15 A 2.2 0 5 6 7 8 9 10 11 1.8 - 50 0 50 100 150 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature Motorola TMOS Power MOSFET Transistor Device Data 3 MGY30N60D VCE = 0 V 6000 Cies 4000 TJ = 25C VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 8000 20 QT 15 C, CAPACITANCE (pF) 10 Q1 Q2 2000 Coes Cres 0 0 5 10 15 20 25 GATE-TO-EMITTER OR COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 5 TJ = 25C IC = 30 A 0 0 30 60 90 120 150 Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate-to-Emitter Voltage versus Total Charge TOTAL SWITCHING ENERGY LOSSES (mJ) 5.6 4.8 4 3.2 2.4 1.6 0.8 0 10 VCC = 360 V VGE = 15 V TJ = 125C TOTAL SWITCHING ENERGY LOSSES (mJ) 6.4 6.5 5.5 4.5 3.5 20 A 2.5 1.5 0.5 10 A VCC = 360 V VGE = 15 V RG = 20 IC = 30 A IC = 30 A 20 A 10 A 20 30 40 50 0 25 50 75 100 125 150 RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (C) Figure 7. Total Switching Losses versus Gate Resistance Figure 8. Total Switching Losses versus Junction Temperature TOTAL SWITCHING ENERGY LOSSES (mJ) 5 TURN-OFF ENERGY LOSSES (mJ) VCC = 360 V VGE = 15 V RG = 20 TJ = 125C 3 VCC = 360 V VGE = 15 V TJ = 125C 2 20 A 1 10 A 4 IC = 30 A 3 2 1 0 0 5 10 15 20 25 30 0 10 20 30 40 50 IC, COLLECTOR-TO-EMITTER CURRENT (AMPS) RG, GATE RESISTANCE (OHMS) Figure 9. Total Switching Losses versus Collector-to-Emitter Current Figure 10. Turn-Off Losses versus Gate Resistance 4 Motorola TMOS Power MOSFET Transistor Device Data MGY30N60D 3 TURN-OFF ENERGY LOSSES (mJ) TURN-OFF ENERGY LOSSES (mJ) VCC = 360 V VGE = 15 V RG = 20 2 IC = 30 A 1 20 A 10 A 0 2 VCC = 360 V VGE = 15 V RG = 20 TJ = 125C 1.5 1 0.5 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR-TO-EMITTER CURRENT (AMPS) Figure 11. Turn-Off Losses versus Junction Temperature i F, INSTANTANEOUS FORWARD CURRENT (AMPS) Figure 12. Turn-Off Losses versus Collector-to-Emitter Current IC, COLLECTOR-TO-EMITTER CURRENT (A) 100 100 10 TJ = 125C TJ = 25C 1 10 1 VGE = 15 V RGE = 20 TJ = 125C 0.1 1 10 100 1000 0.1 0 0.4 0.8 1.2 1.6 VFM, FORWARD VOLTAGE DROP (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 13. Typical Diode Forward Drop versus Instantaneous Forward Current Figure 14. Reverse Biased Safe Operating Area Motorola TMOS Power MOSFET Transistor Device Data 5 MGY30N60D PACKAGE DIMENSIONS 0.25 (0.010) -B- -Q- M TB M -T- C U N A R -Y- P K 1 2 3 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ S DIM A B C D E F G H J K L N P Q R U W STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER CASE 340G-02 TO-264 ISSUE E Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola TMOS Power MOSFET TransistorMGY30N60D/D Device Data *MGY30N60D/D* |
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